Philips bf410a 410b 410c 410d free download

File name bf410a_410b_410c_410d.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification December 1990 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DESCRIPTION PINNING - TO-92 VARIANT Asymmetrical N-channel planar 1 = drain epitaxial junction field-effect 2 = source transistors in a plastic TO-92 variant; 3 = gate intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special 1 handbook, halfpage 2 features the BF410 is very suitable for 3 d applications such as the RF stages in g s FM portables (type A), car radios (type B) and mains radios (type C) or MAM257 the mixer stage (type D). Fig.1 Simplified outline and symbol QUICK REFERENCE DATA Drain-source voltage VDS max. 20 V Drain current (DC or average) ID max. 30 mA Total power dissipation up to Tamb = 75